Demonstration of Ge pMOSFETs with 6 A EOT using TaN/ZrO2/Zr-cap/n-Ge(100) Gate Stack Fabricated by Novel Vacuum Annealing and in-situ Metal Capping Method
- Year
- 2014
- Author
- Yunsang Shin, Wonil Chung, Yujin Seo, Choong-Ho Lee, Dong Kyun Sohn, and Byung Jin Cho
- Conference
- 2014 Symposium on VLSI Technology
Yunsang Shin, Wonil Chung, Yujin Seo, Choong-Ho Lee, Dong Kyun Sohn, and Byung Jin Cho, "Demonstration of Ge pMOSFETs with 6 A EOT using TaN/ZrO2/Zr-cap/n-Ge(100) Gate Stack Fabricated by Novel Vacuum Annealing and in-situ Metal Capping Method", 2014 Symposium on VLSI Technology, Hawaii, USA, June 9-13, 2014.
June 9-13, 2014.
Hawaii, USA