Reliability Improvement of Charge Trap Flash Memory Cell with Sealing Oxide in Fluorine Incorporation
- Year
- 2019
- Author
- Seung Hwan Lee, Tae Yoon Lee, Hyun Jun Ahn, Tae In Lee, Eui Joong Shin, Sung Won Shin, and Byung Jin Cho
- Conference
- The 26th Korean Conference on Semiconductors
Seung Hwan Lee, Tae Yoon Lee, Hyun Jun Ahn, Tae In Lee, Eui Joong Shin, Sung Won Shin, and Byung Jin Cho, "Reliability Improvement of Charge Trap Flash Memory Cell with Sealing Oxide in Fluorine Incorporation", The 26th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2019.
Feb. 13-15, 2019.
Kangwondo, Korea