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Total 8건 1 페이지

2020
8

"Long-term retention and low power OTFT-NVMs with hydroxyl group charge trapping layer via ultrathin iCVD dielectric." 이창현, 박관용, 최준환, 김민주, 조병진, 임성갑, 한국고분자학회 2020년도 추계총회 및 학술대회, 2020
7

"Experimental results of a prototype rapid thermal annealing system" B. J. Cho, K. T. Kim, and C. K. Kim, Conf. on CAD, Semiconductor Material and Components, 2020
6

"High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process" Jae Hwan Kim, Sung Won Shin, Tae In Lee, Wan Sik Hwang, and Byung Jin Cho, 2020 Symposia on VLSI Technology and Circuits, 2020
5

"Enhancement of Program window and Operation Efficiency in Charge Trap Memory Using Anti-ferroelectric HfZrO2" Sung Won Shin, Eui Joong Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Wan Sik Hwang, and Byung Jin Cho, The 27th Korean Conference on Semiconductors, 2020
4

"Leakage current Improvement of Anti-ferroelectric capacitor with Bottom electrode annealing" Seung Hwan Lee, Seong Ho Kim, Hyun Jun Ahn, Tae Ho Kim, Sung Won Shin, and Byung Jin Cho, The 27th Korean Conference on Semiconductors, 2020
3

"Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack" Tae In Lee, Manh-Cuong Nguyen, Min Ju Kim, Hyun Jun Ahn, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Young Yu, and Byung Jin Cho, The 27th Korean Conference on Semiconductors, 2020
2

"Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device" Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sik Hwang, Jaeduk Lee, and Byung Jin Cho, 2020 IEEE International Electron Devices Meeting (IEDM), 2020
1

"Low Temperature and Ion-Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo-Sensor Circuits" Hoonhee Han, Rino Choi, Seong-Ook Jung, Sung Woo Chung, Byung Jin Cho, S. C. Song, and Changhwan Choi, IEEE International Electron Devices Meeting (IEDM), 2020

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