Enhancement of Program window and Operation Efficiency in Charge Trap Memory Using Anti-ferroelectric HfZrO2
- Year
- 2020
- Author
- Sung Won Shin, Eui Joong Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Wan Sik Hwang, and Byung Jin Cho
- Conference
- The 27th Korean Conference on Semiconductors
Sung Won Shin, Eui Joong Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Wan Sik Hwang, and Byung Jin Cho, "Enhancement of Program window and Operation Efficiency in Charge Trap Memory Using Anti-ferroelectric HfZrO2", The 26th Korean Conference on Semiconductors, Kangwondo, Korea, Feburary 12-14. 2020.
Feburary 12-14. 2020.
Kangwondo, Korea