High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process
- Year
- 2020
- Author
- Jae Hwan Kim, Sung Won Shin, Tae In Lee, Wan Sik Hwang, and Byung Jin Cho
- Conference
- 2020 Symposia on VLSI Technology and Circuits
- File
- Jaehwan_VLSI_2020.png (226.1K) 0회 다운로드 DATE : 2020-06-16 10:10:18
Jae Hwan Kim, Sung Won Shin, Tae In Lee, Wan Sik Hwang, and Byung Jin Cho, "High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process," 2020 Symposia on VLSI Technology and Circuits, Hawaii, USA, July. 2020.
July. 2020.
Hawaii, USA