Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor
- Year
- 2023
- Author
- Seongho Kim
- Co-author
- Y. K. Park, G. S. Lee, E. J. Shin, W. S. Ko, H. D. Lee, G. W. Lee and B. J. Cho
- Conference
- 2023 Symposium on VLSI Technology and Circuits (2023 VLSI)
T18-3
Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor
S. Kim*, Y. K. Park*, G. S. Lee*, E. J. Shin*, W. S. Ko**, H. D. Lee**, G. W. Lee** and B. J. Cho*,
*KAIST and **Chungnam National Univ., Korea