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First Demonstration and Record-high Hole Mobility of Ge (110) GAA Nanosheet p-FETs for Heterogeneous 3D Monolithic CFETs 
Year
2024 
Author
Seong Kwang Kim 
Co-author
Hyeong-Rak Lim, Jaeyong Jeong, Youngkeun Park, Jejune Park, Seongil Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, and Sanghyeon Kim 
Conference
2024 Symposium on VLSI Technology and Circuits (2024 VLSI) 

First Demonstration and Record-high Hole Mobility of Ge (110) GAA Nanosheet p-FETs for Heterogeneous 3D Monolithic CFETs

Accerpted

Seong Kwang Kim​1,2, Hyeong-Rak Lim​1, Jaeyong Jeong​1, Youngkeun Park​1, Jejune Park​2, Seongil Park​2, Jaehyun Park​2, Daewon Ha​2, Byung Jin Cho​1, and Sanghyeon Kim​1 

​1​School of Electrical Engineering, KAIST, Daejeon, Korea, *e-mail: shkim.ee@kaist.ac.kr

​2​Semiconductor R&D Center, Samsung Electronics, Co. Ltd., Hwaseong, South Korea