Bandgap-Engineered Boron Oxynitride Tunneling Layer for Reliable PLC operation of 3D V-NAND Flash Memory Devices 

Year

2025 

Author

Dae Hyun Kang 

Co-author

Jaejoong Jeong, Youngkeun Park, Yungjun Kim, Dong Hun Sin, Han Mei Choi, Byung Jin Cho 

Conference

2025 International Electron Devices Meeting (IEDM)