Method of sealing open pores on surface of porous dielectric material using iCVD process
Inventor
B. J. Cho, S. G. Im, S. J. Yoon, K. Pak, H. A. Yoon
No.
15/247,817
출원국가
국외
Date
2016
Date
2016
B. J. Cho, S. G. Im, S. J. Yoon, K. Pak, H. A. Yoon, "Method of sealing open pores on surface of porous dielectric material using iCVD process", US Patent, 15/247,817, 2016. (Patent pending)
