Fabrication method of germanium-based semiconductor device using high-k insulating film and high-pressure hydrogen annealing
- Inventor
- B. J. Cho, T. I. Lee
- No.
- 10-2018-0037209
- 출원국가
- 국내
- Date
- 2018
Fabrication method of germanium-based semiconductor device using high-k insulating film and high-pressure hydrogen annealing
(Ge Semiconductor Device Having High-k Insulating Film and the Fabrication Method Thereof`)