MEMORY SEMICONDUCTOR DEVICES COMPRISING AN ANTI-FERROELECTRIC MATERIAL
- Inventor
- B.J. Cho, S.W. Shin, E.J. Shin
- No.
- US 11,744,082 B2
- 출원국가
- 국외
- 상태
- 등록
- Date
- 2023
B.J. Cho, S.W. Shin, E.J. Shin, "MEMORY SEMICONDUCTOR DEVICES COMPRISING AN ANTI-FERROELECTRIC MATERIAL"