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Total 10건 1 페이지

2025
10

"터널링 유전막을 포함하는 반도체 메모리 장치" B. J. Cho, D. H. Kang, D. H. Sin, H. M. Choi, B. O. Kim, 10-2025-0170356, 국내, 출원 Nov. 2025.
9

"반도체 소자" 조병진, 신성원, 신의중, 10-2855981, 국내, 등록 Sep. 2025.
8

"Capacitor for dynamic random access memory, DRAM including the same and methods of fabricating thereof" 진현수, 조병진, 김성호, 10-2798570, 국내, 등록 April. 2025.
7

"SEMICONDUCTOR MEMORY DEVICE INCLUDING FERROELECTRIC CAPACITOR AND MANUFACTURING METHOD THEREOF" B. J. Cho, Y. K. Park, J. J. Jeong, J. H. Chu, S. H. Kim, D. H. Kang, 25162966.3, 국외, 출원 Mar. 2025.
6

"OXIDE SEMICONDUCTOR MEMORY DEVICE WITH DUAL CHANNEL STRUCTURE AND MANUFACTURING METHOD THEREOF" B. J. Cho, Y. K. Park, J. J. Jeong, D. H. Kang, S. H. Kim, J. H. Chu, 25162982.0, 국외, 출원 Mar. 2025.
5

"DUAL SWITCHING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME" B. J. Cho, Y. K. Park, J. J. Jeong, D. H. Kang, S. H. Kim, J. H. Chu, 2025-037023, 국외, 출원 Mar. 2025.
4

"SEMICONDUCTOR MEMORY DEVICE INCLUDING FERROELECTRIC CAPACITOR AND MANUFACTURING METHOD THEREOF" B. J. Cho, Y. K. Park, J. J. Jeong, J. H. Chu, S. H. Kim, D. H. Kang, 2025-036037, 국외, 출원 Mar. 2025.
3

"OXIDE SEMICONDUCTOR MEMORY DEVICE WITH DUAL CHANNEL STRUCTURE AND MANUFACTURING METHOD THERE OF" B. J. Cho, Y. K. Park, J. J. Jeong, D. H. Kang, S. H. Kim, J. H. Chu, 2025-036036, 국외, 출원 Mar. 2025.
2

"iCVD 공정방식을 통한 3D V-NAND 폴리실리콘 채널 내 Fluorine 도핑 기술" B. J. Cho, J. I. Park, Y. K. Park, S. G. Lim, 10-2025-0025488, 국내, 출원 Feb. 2025.
1

"DUAL SWITCHING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME" B. J. Cho, Y. K. Park, J. J. Jeong, D. H. Kang, S. H. Kim, J. H. Chu, 25160224.9, 국외, 출원 Feb. 2025.

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