Nitride ALD
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댓글 0건 조회 1,156회 작성일 2025-02-04 18:03
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Equipment: Nitride ALD
Model : 8" Atomic Premium System (CN1)
Application
- Nitride Dieletric ALD process (BN, SiN, AlN)
- Plasma and Thermal ALD process
- Plasma treatment
General information
- 8'' Diameter wafer
- Materials - Precursor: TDMAB, BTBAS, TMA
- Materials - Reactants: Ar, N2, NH3, H2
- Wafer temperature: 200~550
Model : 8" Atomic Premium System (CN1)
Application
- Nitride Dieletric ALD process (BN, SiN, AlN)
- Plasma and Thermal ALD process
- Plasma treatment
General information
- 8'' Diameter wafer
- Materials - Precursor: TDMAB, BTBAS, TMA
- Materials - Reactants: Ar, N2, NH3, H2
- Wafer temperature: 200~550
- 이전글Tube Furnace 19.03.05
- 다음글Vacuum Probe Station 18.04.12
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